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郑 岫盈 ( 研究与着作 )
专任,教授
姓名 郑 岫盈 ( 研究与着作 )
职称 教授
兼任职务 一年级甲班导师
电子邮件 sycheng@niu.edu.tw
联络电话 +886-3-9317332
办公室 E411 格致大楼4F
个人网址 http://eceftp1.niu.edu.tw/~sycheng/syc.htm
研究专长 光电元件、高速元件、奈米元件
学历 国立成功大学电机研究所博士(1999)国立台湾海洋大学电机研究硕士班(1996)
负责实验室 高速元件实验室
本年度再收研究生之意愿 欢迎洽谈
  1. Shiou-Ying Cheng*, "Theoretically investigation of an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with a wide-gap collector,"  Semicond. Sci. Technol., vol. 17, pp.405-413, 2002. (SCI, EI)
  2. Shiou-Ying Cheng*, "An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity,"  Superlattice and Microstructures, vol. 33, pp. 1-7, 2003. (SCI, EI)
  3. Shiou-Ying Cheng*, Jing-Yuh Chen, Chun-Yuan Chen, Hung-Ming Chuang, Chih-Hung Yen, Kuan-Ming Lee and Wen-Chau Liu, "Comprehensive study of InGaP/ AlXGa1-XAs /GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlXGa1-XAs graded layers,"  Semicond. Sci. Technol., vol.19, pp.351-358, 2004. (SCI, EI)
  4. Shiou-Ying Cheng*, Chun-Yuan Chen, Ssu-I Fu, Po-Hsien Lai, Yan-Ying Tsai, and Wen-Chau Liu, "DC characterization of an InP/InGaAs tunneling emitter bipolar transistor (TEBT),"  Jpn. J. Appl. Phys., vol. 44, no. 2, pp. 824-827, 2005.
  5. Shiou-Ying Cheng*, Ssu-I Fu, Kuei-Yi Chu, Po-Hsien Lai, Li-Yang Chen, Wen-Chau Liu, and Meng-Hsueh Chiang, "Improved DC and microwave performance of heterojunction bipolar transistors by full sulfur passivation,"  J. Vac. Sci. & Technol., vol. B24, no. 2, pp. 669-674, 2006. (SCI, EI)
  6. Shiou-Ying Cheng* , "Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT),"  Microelectronics Reliability, vol. 47, pp.1208-1212, 2007. (SCI, EI)
  7. Shiou-Ying Cheng*, Ssu-I Fu, Kuei-Yi Chu, Tzu-Pin Chen, Wen-Chau Liu, and Li-Yang Chen, "Improved performances of a two-step passivated heterojunction bipolar transistor,"  Microelectronics Reliability, vol. 48, pp. 200-203, 2008. (SCI, EI)
  1. Kuei-Yi Chu, Shiou-Ying Cheng*, Tzu-Pin Chen, Li-Yang Chen, Tsung-Han Tsai, Jung-Hui Tsai and Wen-Chau Liu , "Influence of Emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors,"  The Eighth International Workshop on Junction Technology (IWJT2008), Shanghai, China,pp. pp.176, 2008.
  2. (2) Li-Yang Chen, Shiou-Ying Cheng*, Kuei-Yi Chu, Jung-Hui Tsai, Tzu-Pin Chen, Tsung-Han Tsai, and Wen-Chau Liu, "Improved formal passivations of pseudomorphic high electron mobility transis,"  The Eighth International Workshop on Junction Technology (IWJT2008), Shanghai, China, pp.183, 2008.
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  3. 94年度, 改良型之化合物半导体异质接面双极性电晶体之研制, 主持人
  4. 96年度, 具欧姆掘入结构之改良式变晶性异质结构场效电晶体元件(I), 主持人
  5. 97年度, 具非退火式的欧姆接触之改良型砷化铟铝/砷化铟镓变晶性高电子移动率电晶体, 主持人, 行政院国家科学委员会
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