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專任教師

  • 職稱
    教授
  • 姓名
    鄭岫盈
  • 電子郵件
  • 聯絡電話
    (03)9357400#7332
  • 授課領域
    VLSI元件設計與模型; 化合物半導體元件; 半導體工程; 半導體元件物理; 半導體元件模擬實驗; 光電半導體; 高速元件; 基本電學; 基礎電學; 普通物理; 微波元件; 微積分; 電子學; 積體電路製程模擬實驗; 積體電路製程整合; 邏輯設計實習
  • 研究專長
    微電工程; 光電工程; 光電元件、高速元件、奈米元件
學校 主修 學位 國別
國立成功大學 電機研究所 博士 中華民國
服務機關 服務部門 職稱 起訖年月
國立宜蘭大學 電子系 主任 2012/08/01~2014/07/31
國立宜蘭大學 公共事務組 組長 2010/08/01~2011/07/31
國立宜蘭大學 電子系 教授 2007 年 08 月 至 ~0~ 年 月
國立宜蘭大學 電子系 副教授 2004 年 02 月 至 2007 年 07 月
亞東技術學院 電機系 副教授 2003 年 02 月 至 2004 年 01 月
經濟部 智慧財產局 兼任審查委員 1999 年 10 月 至 2006 年 12 月
亞東技術學院電機工程系 電機工程系 助理教授 1999 年 08 月 至 2003 年 01 月
類別 獲獎日期 名稱 國別 頒獎單位 獎助金額
校內 2014/08/25 103年度大專校院獎勵特殊優秀人才授予特聘教授二年 中華民國 科技部 114000
校內 2013/08/30 102年度大專校院獎勵特殊優秀人才授予特聘教授二年 中華民國 行政院國家科學委員會 120000
校內 2012/07/30 101年度大專校院獎勵特殊優秀人才授予特聘教授二年 中華民國 行政院國家科學委員會 134256
校內 2011/08/15 100年度大專校院獎勵特殊優秀人才授予特聘教授二年 中華民國 行政院國家科學委員會 130200
校內 2011/03/14 99年度大專校院獎勵特殊優秀人才 中華民國 行政院國家科學委員會 120000
校內 2009/09/23 98年度績優研究獎 中華民國 國立宜蘭大學 100000
實驗室名稱 實驗室網站連結
高速元件實驗室
年度 篇名 期刊等級 期刊名稱 第一作者 共同作者 卷期 起始頁 結束頁 總頁數 語言 相關網址
2021 Hydrogen sensing properties of a GaN/AlGaN-based Schottky diode with a catalytic platinum (Pt) hybrid structure SCI Sensors and Actuators B: Chemical Wei-Cheng Chen Jing-Shiuan Niu, I-Ping Liu, Bu-Yuan Ke, Wen-Chau Liu Volume 331, 15 March 2021, 0 0 0
2021 Hydrogen sensing properties of a novel GaN/AlGaN Schottky diode decorated with palladium nanoparticles and a platinum thin film EI Sensors and Actuators B: Chemical Wei-Cheng Chen Jing-Shiuan Niu, I-Ping Liu, Hong-Yu Chen, Shiou-Ying Cheng, Kun-Wei Lin, Wen-Chau Liu Volume 330, 1 March 2021 0 0 0
2020 A Highly Sensitive Ammonia (NH3) Sensor Based on a Tungsten Trioxide (WO3) Thin Film Decorated With Evaporated Platinum (Pt) Nanoparticles (NPs) EISCI IEEE Trans. Device, accepted Ching-Hong Chang Tzu-Chieh Chou, Wei-Cheng Chen, Jing-Shiuan Niu, Kun-Wei Lin, and Wen-Chau Liu, vol.67, No.3, 2020. 1176 1182 7
2020 Ammonia Sensing Characteristics of a Platinum (Pt) Hybrid Structure/GaN-Based Schottky Diode SCI IEEE Transactions on Electron Devices C H Chang 67 (1), 296-303 0 0 0
2020 Study of a Palladium (Pd)/Aluminum-Doped Zinc Oxide (AZO) Hydrogen Sensor and the Kalman Algorithm for Internet of Things (IoT) Application EISCI IEEE Transactions on Electron Devices Wei-Cheng Chen 0 0 0
2020 Study of a WO3 thin film based hydrogen gas sensor decorated with platinum nanoparticles EISCI Sensors and Actuators B: Chemical Ching-Hong Chang Tzu-Chieh Chou, Wei-Cheng Chen, Jing-Shiuan Niu, Kun-Wei Lin,Jung-Hui Tsai, Wen-Chau Liu Volume 317, 15 August 2020, 12 0 0 0
2017 Performance Enhancement of GaN-Based Light-Emitting Diodes by Using Transparent Ag Metal Line Patterns EISCI IEEE Trans. Electron Dev. Chi-Shiang Hsu
2017 Study of GaN-Based LEDs With Hybrid SiO2 Microsphere/Nanosphere AntiReflection Coating as a Passivation Layer by a Rapid Convection Deposition EISCI IEEE Trans. Electron Dev Chi-Hsiang Hsu
2014 Improved Current Spreading Performance of a GaN-Based Light-Emitting EISCI Solid-State Electron Jian-Kai Liou
2013 Effects of the Use of an Aluminum Reflecting and an SiO2 Insulating Layers (RIL) on the Performance of a GaN-Based Light-Emitting Diode With the Naturally Textured p-GaN Surface EISCI IEEE Trans. Electron Devices Jian-Kai Liou
2012 Characteristics of InGaP/InGaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) with Triple Delta-Doped Sheets EISCI Semiconductors Kuei-Yi Chu
2012 Comprehensive study of InGaP/InGaAs/GaAs Dual Channel Pseudomorphic High Electron Mobility Transistors EISCI Solid-State Electron Kuei-Yi Chu
2011 Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors SCI Superlattices & Microstructures Kuei-Yi Chu
2011 Improved current-spreading performance of an InGaN-based light-emitting diode with a clear p-GaN/n-GaN barrier junction SCI Displays Yi-Jung Liu
2011 Investigation of GaN-Based Light-Emitting Diodes Grown on Vicinal Sapphire Substrates SCI Physica Status Solidi Yi-Jung Liu
2011 On the Characteristics of an Electroless Plated (EP)-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) SCI Solid-State Electron Chien-Chang Huang
2011 Performance of a GaAs-Based Pseudomorphic High Electron Mobility Transistor (PHEMT) with an Electroless-Plated Treated Gate SCI Materials Science Forum Chien Chang Huang
2011 Performance on GaN-Based Light-Emitting Diodes with Different Substrate Tilt Angles SCI Materials Science Forum Jian Kai Liou
2010 Improved performance of GaN-based light-emitting diodes by using short-period superlattice structures SCI Prog. Nat. Sci. Yi-Jung Liu
2010 Performance of a GaAs based pseudomorphic transistor with electroless-plated surface treated gate SCI J. Electrochem. Soc. Li-Yang Chen
2010 Thermal-stability performance of a metamorphic high electron mobility transistor (MHEMT) with non-annealed Ohmic contacts SCI Solid-State Electron Li-Yang Chen
2009 Characteristics of an electroless plated-gate transistor SCI Appl. Phys. Lett. Li-Yang Chen
2009 Comparative Study of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with Different Base Surface Treatments SCI Superlattice and Microstructures Tzu-Pin Chen
2009 Effect of emitter ledge thickness on InGaP/GaAs heterojunction bipolar transistor. Electrochem. and Solid-State Letters SCI Electrochem. and Solid-State Letters Tzu-Pin Chen
2009 On the pseudomorphic high electron mobility transistors (PHEMTs) with a low-temperature gate approach SCI IEEE Electron Device Lett. Li-Yang Chen
2009 Temperature-Dependent Characteristics of a Low-Temperature Deposition Approach on a Pseudomorphic High Electron Mobility Transistor SCI Electrochem. Solid State Lett. Li-Yang Chen
2008 Characteristics of an InGaP/AlxGa1-xAs/GaAs composite-emitter heterojunction bipolar transistor (CEHBT) J.Vac.Sci.& Technol.B 鄭岫盈 Kuei-Yi Chu、Li-Yang Chen、Lu-An Chen、Wen-Chau Liu 第26卷2期
2008 Improved performances of a two-step passivated heterojunction bipolar transistor Microelectronics Reliability 鄭岫盈 Ssu-I Fu、Kuei-Yi Chu、Tzu-Pin Chen、Wen-Chau Liu、Li-Yang Chen 第48卷
2007 Improved Performance of a Dual-Passivated Heterojunction Bipolar Transistor J. Vac. Sci. & Technol. B 鄭岫盈 Wen-Chau Liu 第25卷3期
2007 Temperature-Dependent DC Characteristics of InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) with Different Passivation J. Electrochem. Soc. 鄭岫盈 Kuei-Yi Chu 第154卷
2007 Two-dimensional analysis for emitter ledge thickness of InGaP/GaAs heterojunction bipolar transistors Appl. Phys. Lett. 鄭岫盈 Kuei-Yi Chu 第90卷4期
2007 Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) Microelectronics Reliability 鄭岫盈 第47卷
2006 An Novel InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistor (CEHBT) IEEE Electron Device Lett. 鄭岫盈 Kuei-Yi Chu, and Li-Yang Chen 第27卷
2006 Improved DC and microwave performance of heterojunction bipolar transistors by full sulfur passivation J. Vac. Sci. & Technol. 鄭岫盈 Ssu-I Fu、Kuei-Yi Chu、Po-Hsien Lai、Li-Yang Chen、Wen-Chau Liu、江孟學 第B24卷2期
2006 Improved performances of a two-step passivated heterojunction bipolar transistor Microelectronics Reliability 鄭岫盈 Ssu-I Fu、Kuei-Yi Chu、Tzu-Pin Chen、Wen-Chau Liu、Li-Yang Chen 48:200-203
2006 The Effect of Sulfur Treatment on the Temperature-Dependent Performance of InGaP/GaAs Heterojunction Bipolar Transistors IEEE Trans. on Device and Materials Reliabilit 鄭岫盈 Ssu-I Fu、Tzu-Pin Chen、Po-Hsien Lai、Rong-Chau Liu、Kuei-Yi Chu、Li-Yang Chen、Wen-Chau Liu 第6卷
2006 Very wide current-regime operation of an InP/InGaAs tunneling emitter bipolar transistor (TEBT) Microelectronics Reliability 鄭岫盈 47:1208-1212
2005 Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers Superlattice and Microstructures S.-Y. Cheng Chun-Yuan Chen、Jing-Yuh Chen、Wen-Chau Liu、Wen-Lung Chang、Meng-Hsueh Chiang 第37卷
2005 DC Characterization of an InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT) Jpn. J. Appl. Phys. 鄭岫盈 Chun-Yuan Chen、Ssu-I Fu、Po-Hsien Lai、Yan-Ying Tsai、Wen-Chau Liu 第44卷2期
2004 Analysis of Improved DC and AC Performances of an InGaP/GaAs Heterojunction Bipolar Transistor with a Graded AlxGa1-xAs Layer at Emitter/Base Heterojunction Solid-State Electron 鄭岫盈 第48卷7期
2004 Comprehensive Study of InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs) with Different Thickness of AlXGa1-XAs Graded Layers Journal of Vacuum Science & Technology 鄭岫盈 Chun-Yuan Chen、Jing-Yuh Chen、Hung-Ming Chuang、Chih-Hung Yen、Wen-Chau Liu 第B22卷4期
2004 Comprehensive study of InGaP/ AlXGa1-XAs /GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlXGa1-XAs graded layers Semicond. Sci. Technol. 鄭岫盈 Jing-Yuh Chen, Chun-Yuan Chen, Hung-Ming Chuang, Chih-Hung Yen, Kuan-Ming Lee, Wen-Chau Liu 第19卷
2003 A Hydrogen Sensitive Pd/GaAs Schottky Diode Sensor EISCI Mat. Chem. Phys. 鄭岫盈 第78卷
2003 An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity EISCI Superlattice and Microstructures 鄭岫盈 第33卷
2002 Comprehensive study of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HBT) with a continuous conduction-band structure EISCI Semicond. Sci. Technol. 鄭岫盈 第17卷
2002 Theoretically investigation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide-gap Collector EISCI Semicond. Sci. Technol. 鄭岫盈 第17卷
年度 名稱 研討會名稱 第一作者 共同作者 論文類型 語言 相關網址
2018 A Study of Charge Imbalanced for Super Junction Diode Global Engineering & Applied Science Conference 2018 Yu-Wei Cha Cho-Yen Lo 一般論文
2018 Comprehensive Studies of Floating Field Ring with Different Ring Depth Global Engineering & Applied Science Conference 2018 Cho-Yen Lo Yu-Wei Chao 一般論文
2017 An AlGaN/GaN High Electron Mobility Transistor (HEMT) with Composite AlGaOx and SiO2 Dielectric Layers 2017 SCET (Material Sciences and Technology: Technical Session II), Chengdu, China Ching-Hong Chang
2017 Room-temperature (RT) Hydrogen Sensing Performance of AlGaN/GaN Heterostructure-based Schottky Diodes 2017 SCET (Material Sciences and Technology: Technical Session II), Chengdu, China Wei-Cheng Chen
2015 6-T SRAM performance assessment with stacked silicon nanowire MOSFETs Sixteenth International Symposium on Quality Electronic Design YC Huang MH Chiang 一般論文
2015 An electrophoretic deposition (EPD)-gate approach for a heterostructure field effect transistor (HFET) 2015 ICEAI (poster session), Kyoto Chun-Chia Chen
2015 On a high-power GaN-based light-emitting diode with a nano-hemispherical hybrid backside reflector 2015 ICEAI (poster session), Kyoto Jian-Kai Liou
2014 Improved Performance of a High-Power GaN-Based Light-Emitting Diode with a SiO2 Nanosphere Based ConcaveShape Aluminum Backside Metal Mirro 2014 ICEAS, Sapporo Jian-Kai Liou
2013 A Pd/AlGaN/GaN Heterostructure FieldEffect Transistor (HFET)-Type Hydrogen Gas Sensor with an Electroless Plating (EP)-Gate E-MRS 2013 Spring Meeting, Strasburg, France Chun-Chia Chen
2013 Performance of a GaN-Based Light-Emitting Diode with an Inserted Aluminum Reflector Deposited on the Naturally-Textured p-GaN Surface E-MRS 2013 Spring Meeting, Strasburg, France Jian-Kai Liou
2005 An InGaP/AlXGa1-XAs/GaAs heterojunction bipolar transistors (HBTs) with different doping concentrations of AlXGa1-XAs graded layers EDMS’05, Kaohsiung, Taiwan, R.O.C. 鄭岫盈
2005 An InGaP/AlxGa1-xAs/GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs) 第十二屆三軍官校基礎學術研討會, 高雄 鄭岫盈
2004 Influence of AlXGa1-XAs Graded Layer on the Performance of InGaP/ AlXGa1-XAs /GaAs Composite-Emitter Heterojunction Bipolar Transistors (CEHBTs) EDMS’04 鄭岫盈
2004 Numerical and Experimental Analysis of an InP/InGaAs Tunneling Emitter Bipolar Transistor (TEBT) for Low-Voltage and Low-Power Circuit Applications IVESC2004 鄭岫盈
2002 An InGaP/AlGaAs/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity ICSNN’2002. Toulouse, France 鄭岫盈
2002 An InGaP/GaAs heterojunction bipolar transistor with the optimized setback-layer thickness ICPS, D. P. 235 Edinburgh, UK 鄭岫盈
2002 Performance of an InGaP/AlGaAs/GaAs heterojunction bipolar transistor (HBT) with a fully continuous conduction band EDMS’02, Taipei, Taiwan, R.O.C. 鄭岫盈
2002 Simulation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide Bandgap Collector Proc. the Ninth Military Symposium on Fundamental Science, Kaohsiung, Taiwan, R.O.C. 鄭岫盈
2002 Simulation study of the DC and AC characteristics of an improved InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) with an InGaP wide bandgap collector Command Abstr. Int. Conf. Optoelectronic and Microelectronic and Devices COMMAD’02, abstract141, Sydney, Australia 鄭岫盈
2001 Impulse-Like Negative-Differential-Resistance of Superlatticed Resonant-Tunneling Transistor EDMS’01, Kaohsiung, Taiwan, R.O.C. 鄭岫盈
2001 Simulation of an InGaP/GaAs Heterostructure-Emitter Bipolar Transistor (HEBT) with a Wide Bandgap Collector EDMS’01, Kaohsiung, Taiwan, R.O.C. 鄭岫盈
西元年度 計畫名稱 主持人 工作職稱 共同(協同)主持人 委託/補助機構 計畫開始日 計畫結束日 語言 相關網址
2013 具最佳化步階式結構之銦錫氧化物探討 鄭岫盈 主持人 劉文超 行政院國家科學委員會 2013/08/01 2014/07/31
2012 砷化鋁鎵/砷化銦鎵/砷化鎵變晶性高電子遷移率電晶體之研製 鄭岫盈 主持人 劉文超 行政院國家科學委員會 2012/08/01 2013/07/31
2011 砷化鎵系列雙極性-場效電晶體之研製 鄭岫盈 主持人 劉文超 行政院國家科學委員會 2011/08/01 2012/07/31
2009 具砷化銦鋁極集層結構之磷化銦/砷化銦鎵異質接面雙極性電晶體 鄭岫盈 主持人 行政院國家科學委員會 2009/08/01 2010/07/31
2008 具非退火式的歐姆接觸之改良型砷化銦鋁/砷化銦鎵變晶性高電子移動率電晶體 鄭岫盈 主持人 行政院國家科學委員會 2008/08/01 2009/07/31
2007 具歐姆掘入結構之改良式變晶性異質結構場效電晶體元件(I) 鄭岫盈 主持人 行政院國家科學委員會 2007/08/01 2008/10/31
專利類別 發表日期 專利名稱 專利證號 專利國別 發明人 專利權人 專利開始日期 專利結束日期 相關網址 說明
發明 1970/01/01 Heterojunction bipolar transistor with zero conduction band discontinuity 6791126 US 劉文超、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 Hydrogen-sensitive palladium (Pd) membrane/ semiconductor Schottky diode sensor 6160278 US 劉文超、陳慧英、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 Long-Period Superlattice Resonant Tunneling Transistor 5828077 US 劉文超、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 Negative-Differential-Resistance Heterojunction Bipolar Transistor with Topee-Shaped Current-Voltage 6459103 US 劉文超、王偉州、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 Superlattice negative-differential-resistance functional transistor 6118136 US 劉文超、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 Wide Voltage Operation Regime Double Heterojunction Bipolar Transistor 6031256 US 劉文超、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 ⻑週期砷化銦鎵/砷化銦鋁超晶格共振穿透式電晶體元件 TW365069B 中華民國 劉文超; LIOU, WEN-CHAU (TW); 鄭岫盈; JENG, SHIOU-YING (TW) ⾏政院國家科學委員會 1970/01/01 1970/01/01 非本校
發明 1970/01/01 ⼀種共振穿透異質結構雙極性電晶體 TW441123B 中華民國 劉文超; LIU, WEN-CHAO (TW); 蔡榮輝; CAI, RONG-HUI (TW); 鄭岫盈; ZHENG, XIU-YING (TW) ⾏政院國家科學委員會; 1970/01/01 1970/01/01 非本校
發明 1970/01/01 ⼀種具有連續性導電帶結構之異質接⾯雙極性電晶體 TW427025B 中華民國 劉文超; LIU, WEN-CHAO (TW); 潘繫仁; PAN, XI-REN (TW); 鄭岫盈; ZHENG, XIU-YING (TW) ⾏政院國家科學委員會; 1970/01/01 1970/01/01 非本校
發明 1970/01/01 ⾼功率磷化銦鎵/砷化鎵超晶格射極共振穿透式異質結構電晶體 TW359419U 中華民國 劉文超;蔡榮輝;鄭岫盈 ⾏政院國家科學委員會; 1970/01/01 1970/01/01 非本校
發明 1970/01/01 一種寬廣工作點電壓操作範圍之雙異質接面雙極性電晶體結構 383503 中華民國 劉文超、鄭岫盈 nsc 1970/01/01 1970/01/01 非本校
發明 1970/01/01 一種超晶格式負微分電阻功能型電晶體 384548 中華民國 劉文超、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校
發明 1970/01/01 光控特性之多重負微分電阻交換元件 TW457719B 中華民國 劉文超; LIU, WEN-CHAO (TW); 陳敬育; CHEN, JING-YU (TW); 鄭岫盈; ZHENG, XIU-YING (TW); 王偉州; WANG, WEI-ZHOU (TW) ⾏政院國家科學委員會 1970/01/01 1970/01/01 非本校
發明 1970/01/01 具有連續性導電帶結構之雙異質接⾯雙極性電晶體 TW594986B 中華民國 劉文超 (中華⺠國); LIU, WEN-CHAO (TW); 鄭岫盈 (中華⺠國); ZHENG, XIU-YING (TW) 國立成功⼤學; NATIONAL CHENG KUNG UNIVERSITY (TW) 1970/01/01 1970/01/01 非本校
發明 1970/01/01 具有遮陽帽形負微分電阻特性之異質接⾯雙極性電晶體元件 TW440968B 中華民國 劉文超; LIU, WEN-CHAO (TW); 王偉州; WANG, WEI-ZHOU (TW); 鄭岫盈; ZHENG, XIU-YING (TW) ⾏政院國家科學委員會; 1970/01/01 1970/01/01 非本校
發明 1970/01/01 具零導電帶不連續値之磷化鎵銦/砷化鎵鋁/砷化鎵異質接⾯雙極性電晶體 TW538481B 中華民國 劉文超; LIU, WEN-CHAO (TW); 鄭岫盈; ZHENG, XIU-YING (TW) 國立成功⼤學 1970/01/01 1970/01/01 非本校
發明 1970/01/01 異質接⾯雙極性電晶體 TWI310609B 中華民國 劉文超; 鄭岫盈; 傅思逸 國立成功⼤學 1970/01/01 1970/01/01 非本校
發明 1970/01/01 異質接⾯雙極性電晶體及其製造⽅法 TWI298539B 中華民國 劉文超, 鄭岫盈, 傅思逸 國立成功⼤學 1970/01/01 1970/01/01 非本校
發明 1970/01/01 異質結構場效電晶體 TW588458B 中華民國 劉文超 (中華⺠國); LIU, WEN CHAU (TW); 鄭岫盈 (中華⺠國); CHENG, HSIU-YING (TW); 莊弘銘 (中華⺠國); CHUANG, HUNG-MING (TW); 廖信達 (中華⺠國); LIAO, SIN DA (TW) 國立成功⼤學; 1970/01/01 1970/01/01 非本校
發明 1970/01/01 鈀薄膜/半導體肖特基二極體式氫氣感測器 385366 中華民國 劉文超、陳慧英、鄭岫盈 NSC 1970/01/01 1970/01/01 非本校